x,ku-band internally matched fet features ?e high output power: p1db=42.5dbm(typ.) ?e high gain: g1db=6.0db(typ.) ?e high pae: h add=27%(typ.) ?e broad band: 13.75~14.5ghz ?e impedance matched zin/zout = 50 w ?e hermetically sealed package edition 1.1 may 2005 1 FLM1314-18F description the FLM1314-18F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 w system. absolute maximum ratings (case temperature tc=25 o c) item symbol unit drain-source voltage v ds v gate-source voltage v gs v total power dissipation p t w storage temperature t stg o c channel temperature t ch o c recommended operating condition (case temperature tc=25 o c) item symbol unit dc input voltage v ds v forward gate current i gf ma reverse gate current i gr ma electrical characteristics (case temperature tc=25 o c) min. typ. max. drain current i dss - 9.3 14 a trans conductance g m - 6600 - ms pinch-off voltage v p -0.5 -1.5 -3.0 v gate-source breakdown voltage v gso -5.0 - - v output power at 1db g.c.p. p 1db 42.0 42.5 - dbm power gain at 1db g.c.p. g 1db 5.0 6.0 - db drain current i dsr - 5.0 6.0 a power-added efficiency n add - 27 - % gain flatness d g - - 1.2 db 3rd order intermodulation distortion im 3 -25 -30 - dbc thermal resistance r th channel to case - 1.8 2.0 o c/w channel temperature rise d t ch - - 100 o c case style : ib g.c.p.: gain compression point, s.c.l.: single carrier level esd class iii 2000v ?@ ~ note : based on eiaj ed-4701 c-111a (c=100pf, r=1.5k w ) i gs =-390ua v ds =10v i ds dc=4.0a f= 13.75 ~ 14.5 ghz zs=z l =50 ohm 10v x i dsr x r th unit v ds =5v , v gs =0v v ds =5v , i ds =4.65a v ds =5v , i ds =390ma f=14.5 ghz d f=10mhz ?c 2-tone test pout=36.0dbm (s.c.l.) r g =25 ohm ?? -9.6 item symbol condition limit ?? 10 r g =25 ohm ?? 44.6 75 rating 15 -5 condition limit -65 to +150 175
-52 -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 30 31 32 33 34 35 36 37 38 output power (s.c.l.) [dbm] intermodulation distortion [dbc] im3 im5 FLM1314-18F x,ku-band internally matched fet 2 0 20 40 60 80 0 50 100 150 200 case temperature [ o c] total power dissipation [w] imd vs output power output power vs. frequency power derating curve vds=10v, idsdc=4.0a vds=10v, idsdc=4.0a 32 34 36 38 40 42 44 13.50 13.75 14.00 14.25 14.50 14.75 frequency [ghz] output power [dbm] p1db 27dbm 31dbm 35dbm 38dbm f1=14.50ghz, f2=14.51ghz output power , power added efficiency v.s. input power 34 35 36 37 38 39 40 41 42 43 44 28 30 32 34 36 38 40 input power (dbm) output power (dbm) 0 10 20 30 40 50 60 70 80 90 100 power added efficiency (%) pout pae vds=10v idsdc=4.0a freq=14.125ghz
FLM1314-18F x,ku-band internally matched fet 3 ?? s-parameters v ds =10.0v , ids=4.0a freq.(ghz) s11mag s11ang s21mag s21ang s12mag s12ang s22mag s22ang 13.5 0.462 -154.1 1.909 51.8 0.099 41.8 0.402 115.1 13.6 0.394 -163.2 1.976 30.0 0.103 21.9 0.420 101.9 13.7 0.328 -173.9 2.026 7.7 0.107 1.5 0.434 89.3 13.8 0.255 172.6 2.059 -14.9 0.109 -18.8 0.443 77.7 13.9 0.189 156.0 2.093 -37.5 0.112 -39.3 0.452 67.7 14.0 0.130 129.2 2.105 -59.9 0.114 -59.9 0.455 58.0 14.1 0.099 85.1 2.111 -82.7 0.114 -80.4 0.449 50.5 14.2 0.115 38.8 2.105 -105.5 0.115 -100.7 0.439 44.0 14.3 0.158 8.7 2.095 -128.4 0.115 -121.2 0.418 38.0 14.4 0.209 -13.0 2.090 -151.2 0.115 -142.0 0.392 34.0 14.5 0.254 -30.8 2.089 -174.2 0.114 -162.8 0.362 29.6 14.6 0.308 -48.6 2.061 161.8 0.112 176.1 0.320 29.6 14.7 0.360 -66.5 2.028 137.5 0.110 154.2 0.274 31.7 s12 s21 0.2 3 s11 s22 13.75ghz 14.125 13.75ghz 14.5 14.125 14.5 0 ?? +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10 ?? 180 0 -90 +90 scale for | s 12 | 2 scale for |s 21 | 13.75ghz 13.75ghz 14.125 14.125 14.5 14.5
x,ku-band internally matched fet 4 FLM1314-18F ?? package out line unit : mm pin assignment 1 : gate 2 : source 3 : drain 4 : source case style : ib
FLM1314-18F x,ku-band internally matched fet 5 for further information please contact : caution eudyna devices compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ?e do not put these products into the mouth. ?e do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ?e observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj phone: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road, tsim sha tsui kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho, nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1,kanai-cho,sakae-ku,yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170
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